| PART |
Description |
Maker |
| GTO2940-12RP |
GTO Clamping Capacitors, Self-healing, Segmented
|
Vishay Intertechnology,Inc.
|
| B25856K7505K003 B25856 B25856J0474K003 B25856J7305 |
MKV AC, MKV DC Capacitors LSI Snubbering and Clamping
|
EPCOS[EPCOS]
|
| FG1600BX24 FG2000DX24 FG2000DX32 |
THYRISTOR|GTO|1.2KV V(DRM)|TO-200VAR75 晶闸管| GTO的| 1.2KV五（DRM）的|00VAR75
THYRISTOR|GTO|1.2KV V(DRM)|TO-200AE 晶闸管| GTO的| 1.2KV五（DRM）的|00AE
|
Dynex Semiconductor, Ltd.
Fairchild Semiconductor, Corp.
|
| EL2150CN EL2157C |
125 MHz Single Supply/ Clamping Op Amps
125 MHz Single Supply, Clamping Op Amp(125MHz 单电源钳位运算放大器)
|
Elantec
|
| SG2500GXH21 |
800 A, 4500 V, SYMMETRICAL GTO SCR
|
|
| CDBD5200-HF CDBD5100-HF CDBD545-HF CDBD540-HF CDBD |
Halogen Free Schottky Barrier Diodes, V<sub>RRM</sub>=45V, V<sub>R</sub>=45V, I<sub>O</sub>=5A
Halogen Free Schottky Barrier Diodes, V<sub>RRM</sub>=40V, V<sub>R</sub>=40V, I<sub>O</sub>=5A
SMD Schottky Barrier Rectifiers
|
Comchip Technology
|
| HGTP20N36G3VL HGT1S20N36G3VLS HGT1S20N36G3VL |
20A, 360V N-Channel, Logic Level, Voltage Clamping IGBTs 37.7 A, 355 V, N-CHANNEL IGBT, TO-262AA
20A 360V N-Channel Logic Level Voltage Clamping IGBTs
N/A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SDA4AK SDA2AK |
Bidirectional clamping diodes
|
SEMIKRON[Semikron International]
|
| SMS05 |
Low clamping voltage
|
Shanghai Leiditech Elec...
|
| 6RT411HH |
THYRISTOR|GTO|4.4KV V(DRM)|TO-200VAR109 晶闸管| GTO的| 4.4KV五（DRM）的|00VAR109
|
Cornell Dubilier Electronics, Inc.
|
| FG2000DX40 |
THYRISTOR|GTO|2KV V(DRM)|TO-200AE 晶闸管| GTO的| 2kV的五（DRM）的|00AE
|
Fairchild Semiconductor, Corp.
|
